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Schottky diode  also known as hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It is named after German physicist Walter H. Schottky .

When sufficient forward voltage is applied, a current flows in the forward direction. A silicon diode has a typical forward voltage of 600–700 mV, while the Schottky’s forward voltage is 150–450 mV. This lower forward voltage requirement allows higher switching speeds and better system efficiency.